high-tech operate engineering company IPM develops and patent grand
DE10328937 a dual high power, high voltage, medium frequency switching
converter unit which works with hybrid drives, compact EMI safe
semiconductor power electronic stages, supporting capacitors and high
voltage ferrite transformers to generate ultra short high voltage
pulses and sparking burst groups.

Advantages are based on uses of standard circuits with extended
semiconductors for e.g. cluster micro perforation, corona substrate
treatment, ac-ac, ac-dc converter, drive units, frequency, upward or
downward converters, power electronics supplies, etc.

IPM is looking for science, industrial, power electronics partners who
are interested in a licence agreement, technical cooperation for other
wide application fields.

Working principle
Industry application of electrostatic perforation, AC-AC, AC-DC,
converting, drives or others uses IGBT, MOSFET, HVFET semiconductor
power stages. That circuits are working as upward converters with
extremely short power pulses from 200 nano up to 15 micro second, high
current peaks up to 300 Amps by du/dt of 1500V/µs on a serial
connected inductivity and loading condenser where the secondary
ferrite transformer coils supply sparking electrodes up to 50 KVss as
a permanent open loop and short circuit condition.

A safety circuit logic and two hybrid drivers allows a alternately
switching of semiconductor A and B which generating consequently
higher operation frequencies and power levels meanwhile electrical and
thermal conditions remains on each in the same range as in single
switching status.

In conclusion: approximately double frequency and power level
condition obtains higher switching efficiencies, more perforation
power, higher corona treatment level, powerful drives, frequency
converters etc. depends of industry applications.

Advantages
Dual IGBT, HVFET or MOSFET semiconductors in high power, high current,
high voltage circuits obtains in electrostatic nano or micro cluster
perforation, surface treatment, surface modifications, corona
treatment, converters, drives or other switching application
frequencies up to 250 KHz, 1400 V/ce, power levels up to 30 KW and
more. Higher power efficiencies and lower switching losses are further
advantages.

The precise pulse timing by a certain time window with constant or
variable frequency generates with high voltages sparking holes sizes
and sequences through the fast moving material webs.

Repeat frequencies of the entire circuit can up to the double
switching frequency of each semiconductor.

For example by electrostatic micro cluster perforation in permeability
ranges from 80 C.U. up to 2500 C.U., paper web speeds up to 450 m/min
and web widths up to 2000 mm are archive able.

Other applications
Corona treatment units, Plasma jet control, heavy Ion research, high
power switching devices, power supplies, AC/DC power drives, AC/DC or
AC/AC converters, laser diode supplies, compact switching systems,
frequency converter, emergency power supplies, etc.

The new twin semiconductor circuit enables applications with hybrid
drives, semiconductor high voltage levels, upward, downward or other
converters which operate with supporting capacitors, high voltage
ferrite transformers in extremely compact and modular design. Several
advantages are the high efficiency of pulse power transmission and
energy ratios. E.g. traditional corona or other medium frequency
generators of 30 KHz operation range are now easy to modify up to 60
KHz by double power level switching conditions and 60 KW.

Patent grand for process and device DE10328937 of IGBT power switching
unit.

Future prospects
Our highly modern, industrially approved technology operation which
even can be relied on when operated 24/7 can be integrated into
existing rewinding machines devices or systems. Also, they can be used
as completely independent production machines. New ranges of
applications will be made accessible as new products with special
features will be developed.

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technology down loads
http://www.microperforation.com/igbt-esp-unit.html
http://www.microperforation.com.cn/ipm-technology.html
http://www.deguodaguan.com/ipm/engli...eerreport.html

patent references
http://www.wikipatents.com/gb/2149092.html
http://www.wikipatents.com/de/3332886.html
http://www.wikipatents.com/de/2918283.html
http://www.freepatentsonline.com/EP0460369.html
http://www.freepatentsonline.com/7224447.html

更多信�请�系
IPM- International Perforation Management 国际工程管�公�
high-tech engineering - China €“ Germany - Thailand
Mr. Werner Grosse �尔那.克罗瑟先生
ä¼*真：0049-1212-5-375-17-531
网�：http://www.microperforation.com
网站 : http://www.microperforation.com.cn
网站 : http://www.deguodaguan.com/ipm/