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Correct to -- Question regarding FET with low Drain to Source capacitance - FET_termination.jpg (0/1)
I am designing a switchable 75 ohm terminator circuit for a video
application using a Enhance Mode N-Channel MOSFET, ZVN4106F (ZETEX) and a 75 ohm resistor. Please see the JPG attachment. The Source is connected to ground. The Drain is connected to a 75ohm resistor and the other side of the 75ohm resistor end to the video source-to-a video analyzer coax line. The gate of the FET is connect to a TTL source. The video source is sweeping video from 1 to 30 MHz. When the TTL is high, the FET turns on and the analyzer sees the termination. The frequency response is flat all the way to 30 MHz. When the TTL is low, the FET turns off and the analyzer sees the unterminated video,but the frequency response rolls down to 15.4MHz at -3dB. Doing my calculation using 15.4MHz, 75ohm load and fc=1/2pi*RC. The capacitance of the FET I am using when it is off is about 137pF. Too high for my application since I need to have a flat response within 0.1 dB range all the way to 20MHz. I figure if I can get a low capacitance Drain-to-source Enhance Mode N-Channel MOSFET of about 15pF or below, I'll be OK. Any idea where I can find a FET like this? By the way. In the past, someone sent me a 4 Bipolar/2 diode approach to the switchable termination problem. This circuit worked great, but with a cost. I need to use a -5v source that is not part of the prototype design. The design will provide a +5v and a +12V voltage source. Also, if i did provide a -5v souce, this source will need to support 400mA load current since I would have to use 8 of these switchable circuit(50mA each). Too high. The MOSFET approach on the other hand draws very little current and can use an only +5v design scheme. So I have to make the MOSFET approach to work, 1 to 20MHz flatness. Any idea will be helpful. Caesar |
#2
Posted to sci.electronics.design,alt.electronics,sci.electronics.components
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Correct to -- Question regarding FET with low Drain to Source capacitance - FET_termination.jpg (0/1)
["Followup-To:" header set to alt.electronics.]
On 2006-02-18, LRCR wrote: I am designing a switchable 75 ohm terminator circuit for a video application using a Enhance Mode N-Channel MOSFET, ZVN4106F (ZETEX) and a 75 ohm resistor. Please see the JPG attachment. The Source is connected to ground. The Drain is connected to a 75ohm resistor and the other side of the 75ohm resistor end to the video source-to-a video analyzer coax line. The gate of the FET is connect to a TTL source. The video source is sweeping video from 1 to 30 MHz. When the TTL is high, the FET turns on and the analyzer sees the termination. The frequency response is flat all the way to 30 MHz. When the TTL is low, the FET turns off and the analyzer sees the unterminated video,but the frequency response rolls down to 15.4MHz at -3dB. Doing my calculation using 15.4MHz, 75ohm load and fc=1/2pi*RC. The capacitance of the FET I am using when it is off is about 137pF. Too high for my application since I need to have a flat response within 0.1 dB range all the way to 20MHz. I figure if I can get a low capacitance Drain-to-source Enhance Mode N-Channel MOSFET of about 15pF or below, I'll be OK. Any idea where I can find a FET like this? put an inverse voltage on the gate, that'll increase the capacitance a bit. By the way. In the past, someone sent me a 4 Bipolar/2 diode approach to the switchable termination problem. This circuit worked great, that was me, glad to hear it. but with a cost. I need to use a -5v source that is not part of the prototype design. The design will provide a +5v and a +12V voltage source. Also, if i did provide a -5v souce, this source will need to support 400mA load current since I would have to use 8 of these switchable circuit(50mA each. Too high. possibly you could run them at a lower voltage, eg +2v and -2V The MOSFET approach on the other hand draws very little current and can use an only +5v design scheme. So I have to make the MOSFET approach to work, 1 to 20MHz flatness. Any idea will be helpful. Bye. Jasen |
#3
Posted to alt.electronics
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Correct to -- Question regarding FET with low Drain to Source capacitance - FET_termination.jpg (0/1)
Thanks for your input regarding the 4 bipolar/2 diode approach.
Caesar On Sun, 19 Feb 2006 04:56:29 -0000, Jasen Betts wrote: ["Followup-To:" header set to alt.electronics.] On 2006-02-18, LRCR wrote: I am designing a switchable 75 ohm terminator circuit for a video application using a Enhance Mode N-Channel MOSFET, ZVN4106F (ZETEX) and a 75 ohm resistor. Please see the JPG attachment. The Source is connected to ground. The Drain is connected to a 75ohm resistor and the other side of the 75ohm resistor end to the video source-to-a video analyzer coax line. The gate of the FET is connect to a TTL source. The video source is sweeping video from 1 to 30 MHz. When the TTL is high, the FET turns on and the analyzer sees the termination. The frequency response is flat all the way to 30 MHz. When the TTL is low, the FET turns off and the analyzer sees the unterminated video,but the frequency response rolls down to 15.4MHz at -3dB. Doing my calculation using 15.4MHz, 75ohm load and fc=1/2pi*RC. The capacitance of the FET I am using when it is off is about 137pF. Too high for my application since I need to have a flat response within 0.1 dB range all the way to 20MHz. I figure if I can get a low capacitance Drain-to-source Enhance Mode N-Channel MOSFET of about 15pF or below, I'll be OK. Any idea where I can find a FET like this? put an inverse voltage on the gate, that'll increase the capacitance a bit. By the way. In the past, someone sent me a 4 Bipolar/2 diode approach to the switchable termination problem. This circuit worked great, that was me, glad to hear it. but with a cost. I need to use a -5v source that is not part of the prototype design. The design will provide a +5v and a +12V voltage source. Also, if i did provide a -5v souce, this source will need to support 400mA load current since I would have to use 8 of these switchable circuit(50mA each. Too high. possibly you could run them at a lower voltage, eg +2v and -2V The MOSFET approach on the other hand draws very little current and can use an only +5v design scheme. So I have to make the MOSFET approach to work, 1 to 20MHz flatness. Any idea will be helpful. Bye. Jasen |
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